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4AM16 Fiches technique(PDF) 3 Page - Hitachi Semiconductor

No de pièce 4AM16
Description  Silicon N-Channel/P-Channel Power MOSFET Array
Download  11 Pages
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Fabricant  HITACHI [Hitachi Semiconductor]
Site Internet  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

4AM16 Fiches technique(HTML) 3 Page - Hitachi Semiconductor

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4AM16
3
Electrical Characteristics (Ta = 25°C)
N channel
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 µA, VDS = 0
Gate to source leak current
I
GSS
±10
µA
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
–250
µA
V
DS = 50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
R
DS(on)
0.13
0.17
I
D = 4 A, VGS = 10 V*
1
resistance
0.18
0.24
I
D = 4 A, VGS = 4 V*
1
Forward transfer admittance
|y
fs|
3.5
5.5
S
I
D = 4 A
V
DS = 10 V*
1
Input capacitance
Ciss
400
pF
V
DS = 10 V
Output capacitance
Coss
220
pF
V
GS = 0
Reverse transfer capacitance
Crss
60
pF
f = 1 MHz
Turn-on delay time
t
d(on)
5
ns
I
D = 4 A
Rise time
t
r
45
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
150
ns
R
L = 7.5 Ω
Fall time
t
f
85
ns
Body to drain diode forward
voltage
V
DF
1.2
V
I
F = 8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
120
ns
I
F = 8 A, VGS = 0,
diF/dt = 50 A/µs
Note:
1. Pulse Test


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