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2N5038 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce 2N5038
Description  NPN SILICON POWER TRANSISTORS
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
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2N5038 Fiches technique(HTML) 2 Page - ON Semiconductor

  2N5038 Datasheet HTML 1Page - ON Semiconductor 2N5038 Datasheet HTML 2Page - ON Semiconductor 2N5038 Datasheet HTML 3Page - ON Semiconductor 2N5038 Datasheet HTML 4Page - ON Semiconductor  
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2N5038 2N5039
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
2N5038
2N5039
VCEO(sus)
90
75
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 V)
2N5038
(VCE = 110 Vdc, VBE(off) = 1.5 V)
2N5039
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N5038
(VCE = 85 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N5039
ICEX
50
50
10
10
mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
2N5038
2N5039
(VEB = 7 Vdc, IC = 0)
Both
IEBO
5
15
50
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 12 Adc, VCE = 5 Vdc)
2N5038
(IC = 10 Adc, VCE = 5 Vdc)
2N5039
hFE
20
20
100
100
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
VCE(sat)
2.5
Vdc
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
VBE(sat)
3.3
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common–Emitter Small–Signal Short–Circuit
Forward Current Transfer Ratio
(IC = 2 Adc, VCE = 10 Vdc, f = 5 MHz)
|hfe|
12
SWITCHING CHARACTERISTICS
RESISTIVE LOAD
Rise Time
(VCC = 30 Vdc)
tr
0.5
µs
Storage Time
(IC = 12 Adc, IB1 = IB2 = 1.2 Adc)
2N5038
ts
1.5
µs
Fall Time
(IC = 10 Adc, IB1 = IB2 = 1 Adc)
2N5039
tf
0.5
µs
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300, µs, Duty Cycle v 2%.
100
Figure 2. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5
2
0.1
1
10
100
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
70
1
dc
50
20
10
0.5
0.2
2
3
5
7
20
30
50
TC = 25°C
2N5039
2N5038
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
Second breakdown pulse limits are valid for duty cycles to
10%. At high case temperatures, thermal limitations may re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.


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