2N4402 2N4403

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

6

8

10

0

4

2

0.1

2.0 5.0

10

20

50

1.0

0.5

0.2

0.01 0.02

0.05

100

Figure 8. Frequency Effects

f, FREQUENCY (kHz)

SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = –10 Vdc, TA = 25°C

Bandwidth = 1.0 Hz

IC = 1.0 mA, RS = 430 Ω

IC = 500 µA, RS = 560 Ω

IC = 50 µA, RS = 2.7 kΩ

IC = 100 µA, RS = 1.6 kΩ

RS = OPTIMUM SOURCE RESISTANCE

50

100

200

500

1 k

2 k

5 k

10 k

20 k

50 k

6

8

10

0

4

2

Figure 9. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

f = 1 kHz

IC = 50 µA

100

µA

500

µA

1.0 mA

h PARAMETERS

VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C

This group of graphs illustrates the relationship between

hfe and other “h” parameters for this series of transistors. To

obtain these curves, a high–gain and a low–gain unit were

selected from both the 2N4402 and 2N4403 lines, and the

same units were used to develop the correspondingly–

numbered curves on each graph.

Figure 10. Current Gain

IC, COLLECTOR CURRENT (mAdc)

0.1

0.2

0.5 0.7

1.0

2.0

3.0

10

0.3

300

700

30

200

100

1000

Figure 11. Input Impedance

IC, COLLECTOR CURRENT (mAdc)

100 k

100

50

5.0 7.0

20 k

10 k

5 k

2 k

1 k

0.1

0.2

0.5 0.7 1.0

2.0

3.0

10

0.3

5.0 7.0

Figure 12. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mAdc)

0.1

0.2

0.5 0.7 1.0

2.0

3.0

10

0.3

0.1

20

Figure 13. Output Admittance

IC, COLLECTOR CURRENT (mAdc)

500

1.0

5.0 7.0

50

20

10

5.0

2.0

5.0

2.0

1.0

0.5

0.2

2N4403 UNIT 1

2N4403 UNIT 2

2N4402 UNIT 1

2N4402 UNIT 2

0.1

0.2

0.5 0.7 1.0

2.0

3.0

10

0.3

5.0 7.0

500

70

50 k

500

200

2N4403 UNIT 1

2N4403 UNIT 2

2N4402 UNIT 1

2N4402 UNIT 2

2N4403 UNIT 1

2N4403 UNIT 2

2N4402 UNIT 1

2N4402 UNIT 2

10

2N4403 UNIT 1

2N4403 UNIT 2

2N4402 UNIT 1

2N4402 UNIT 2

100