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2N3906 Fiches technique(PDF) 5 Page - ON Semiconductor

No de pièce 2N3906
Description  General Purpose Transistors(PNP Silicon)
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
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2N3906 Fiches technique(HTML) 5 Page - ON Semiconductor

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2N3905 2N3906
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 13. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
0.5
2.0
3.0
10
50
70
0.2
0.3
0.1
100
1.0
0.7
200
30
20
5.0
7.0
VCE = 1.0 V
TJ = +125°C
+25
°C
–55
°C
Figure 14. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
0.5
2.0
3.0
10
0.2
0.3
0
1.0
0.7
5.0
7.0
IC = 1.0 mA
TJ = 25°C
0.07
0.05
0.03
0.02
0.01
10 mA
30 mA
100 mA
Figure 15. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 16. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1.0
2.0
5.0
10
20
50
0
100
– 0.5
0
0.5
1.0
0
60
80
120
140
160
180
20
40
100
200
– 1.0
– 1.5
– 2.0
200
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
+25
°C TO +125°C
–55
°C TO +25°C
+25
°C TO +125°C
–55
°C TO +25°C
qVC FOR VCE(sat)
qVB FOR VBE(sat)


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