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KM68U1000BLTE-10L Fiches technique(PDF) 6 Page - Samsung semiconductor |
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KM68U1000BLTE-10L Fiches technique(HTML) 6 Page - Samsung semiconductor |
6 / 10 page KM68V1000B, KM68U1000B Family CMOS SRAM Revision 2.0 March 1998 Address Data Out Previous Data Valid Data Valid TIMMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VlL, WE=VIH) tAA tRC tOH TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) Data Valid High-Z CS1 Address OE Data out NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. CS2 tOH tAA tOLZ tLZ tOHZ tHZ(1,2) tRC tCO2 tOE tCO1 |
Numéro de pièce similaire - KM68U1000BLTE-10L |
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Description similaire - KM68U1000BLTE-10L |
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