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FDT461N Fiches technique(PDF) 5 Page - Fairchild Semiconductor |
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FDT461N Fiches technique(HTML) 5 Page - Fairchild Semiconductor |
5 / 10 page ©2004 Fairchild Semiconductor Corporation FDT461N Rev. A1 Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Figure 12. Capacitance vs Drain to Source Voltage Figure 13. Gate Charge Waveforms for Constant Gate Current Typical Characteristics T A = 25°C unless otherwise noted 0.9 1.0 1.1 -80 -40 0 40 80 120 160 1.2 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA 1 10 100 0.1 1 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD COSS ≅ CDS + CGD CRSS = CGD 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 Qg, GATE CHARGE (nC) VDD = 50V ID = 0.54A Test Circuits and Waveforms Figure 14. Unclamped Energy Test Circuit Figure 15. Unclamped Energy Waveforms tP VGS 0.01 Ω L IAS + - VDS VDD RG DUT VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VDD VDS BVDSS tP IAS tAV 0 |
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