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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SLP65R500SJ Fiches technique(PDF) 2 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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SLP65R500SJ Fiches technique(HTML) 2 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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2 / 7 page  Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 00 July. 2014 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA, TJ=25℃ 650 -- -- V VGS = 0 V, ID = 250 uA, TJ=150℃ -- 700 -- V △ BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.6 -- V/℃ IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- -- 1 uA VDS = 480 V, TC = 125℃ -- -- 10 uA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA 2.5 -- 4.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5 A -- 0.45 0.5 Ω gFS Forward Transconductance VDS = 40 V, ID = 5 A (Note 4) -- 16 -- S Rg Gate resistance f=1 MHz, Open drain -- 4.5 -- Ω Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 600 -- pF Coss Output Capacitance -- 120 -- pF Crss Reverse Transfer Capacitance -- 55 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD =325 V, ID = 5 A, RG = 20 Ω (Note 4, 5) -- 25 -- ns tr Turn-On Rise Time -- 55 -- ns td(off) Turn-Off Delay Time -- 70 -- ns tf Turn-Off Fall Time -- 40 -- ns Qg Total Gate Charge VDS = 480 V, ID = 10 A, VGS = 10 V (Note 4, 5) -- 35 -- nC Qgs Gate-Source Charge -- 3.8 -- nC Qgd Gate-Drain Charge -- 4 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 40 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 10 A, -- 240 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/us (Note 4) -- 3.1 -- uC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=60mH, IAS=2A, VDD=150V, Starting TJ=25 ℃ 3. ISD≤10A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25 ℃ 4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics |
Numéro de pièce similaire - SLP65R500SJ |
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Description similaire - SLP65R500SJ |
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