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DAM32D5P40F Fiches technique(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM32D5P40F Fiches technique(HTML) 2 Page - DACO SEMICONDUCTOR CO.,LTD. |
2 / 4 page Electrical Characteristics @ TJ =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V IDS=-250uA -40 - - V Zero Gate Voltage Drain Current IDSS VGS=0V VDS=-40V - - -1 uA Gate-Body Leakage IGSS VGS=±20V VDS=0V - - ±100 nA ON Characteristics Gate Threshold Voltage VTH VDS=VGS IDS=-250uA -1.2 -1.6 -2.5 V Static Drain-Source On-Resistance RDS(on) VGS=-10V IDS=-15A - 15 17 mΩ Dynamic Characteristics Input Capacitance Ciss VDS=-25V VGS=0V Freq.=1MHz - 2260 3300 pF Output Capacitance Coss - 170 250 Reverse Transfer Capacitance Crss - 130 190 Switching Characteristics Turn-On Delay Time Td(on) VDD=-20V VGS=-10V RG = 6Ω IDS=-1A - 18.2 36 ns Rise Time Tr - 4.2 8.5 Turn-Off Delay Time Td(off) - 72 140 Fall Time Tf - 9.8 20 Total Gate Charge Qg VDS=-20V VGS=-4.5V IDS=-5A - 19 38 nC Gate to Source Charge Qgs - 6.2 12 Gate to Drain Charge Qgd - 5.2 10 Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V IS=-1A - - -1 V Notes: 1.Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-45A.,RG= 25Ω, Starting TJ=25°C 3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air. Aug.2017 DAM32D5P40F |
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