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8ETH03S Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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8ETH03S Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Ultra fast Rectifier 8ETH03S FEATURES · With TO-263(DPAK) packaging · Low forward voltage drop · Super high speed switching · High reliability by planer design · High surge current capability · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching power supply · Power switching circuits · High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 300 V IF(AV) Average Rectified Forward Current @Tc=155℃;Square Wave; Duty=1/2 8 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 100 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ |
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