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TPCS8102 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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TPCS8102 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TPCS8102 2002-05-17 2 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 83.3 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 208 °C/W Marking (Note 5) Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) Note 3: VDD = −16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −6.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: ○ on lower right of the marking indicates Pin 1. ※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) ※ Type TPCS8102 FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) |
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