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I5116PY Fiches technique(PDF) 80 Page - Nuvoton Technology Corporation |
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I5116PY Fiches technique(HTML) 80 Page - Nuvoton Technology Corporation |
80 / 90 page ISD5100 SERIES Publication Release Date: Oct 31, 2008 - 80 - Revision 1.42 11.5. ISD5116 DIE INFORMATION ≈ ISD5116 ≈ V SSA MIC + MIC - ANA OUT + ANA OUT - ACAP SP - V SSA [2] SP + V CCA [2] ANA IN AUX IN AUX OUT V SSD V SSD A0 SDA A1 SCL V CCD XCLK RAC V SSA INT V CCD ISD5116 Device Die Dimensions X: 4125 µm Y: 8030 µm Die Thickness [3] 292.1 µm ± 12.7 µm Pad Opening Single pad: 90 x 90 µm Double pad: 180 x 90 µm Notes 1. The backside of die is internally connected to Vss. It MUST NOT be connected to any other potential or damage may occur. 2. Double bond recommended, if treated as single doubled-pad. 3. This figure reflects the current die thickness. Please contact Nuvoton as this thickness may change in the future. |
Numéro de pièce similaire - I5116PY |
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Description similaire - I5116PY |
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