SI3867DV datasheet(1/5 Pages) VISHAY

No de pièce	SI3867DV

Description	P-Channel 20-V (D-S) MOSFET

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FEATURES

D TrenchFETr Power MOSFET

D PWM Optimized

APPLICATIONS

D DC/DC

- HDD

- Power Supplies

D Portable Devices Such As Cell Phones, PDA,

DSC, and DVC

Si3867DV

Vishay Siliconix

Document Number: 72068

S-31988—Rev. B, 13-Oct-03

www.vishay.com

1

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.051 @ VGS = -4.5 V

-5.1

-20

0.067 @ VGS = -3.3 V

-4.5

0.100 @ VGS = -2.5 V

-3.7

(4) S

(3) G

(1, 2, 5, 6) D

P-Channel MOSFET

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

Ordering Information: Si3867DV-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

"12

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

-5.1

-3.9

Continuous Drain Current (TJ = 150_C)a

TA = 85_C

ID

-3.7

-2.8

A

Pulsed Drain Current

IDM

-20

A

Continuous Diode Current (Diode Conduction)a

IS

-1.7

-0.9

Maximum Power Dissipationa

TA = 25_C

PD

2.0

1.1

W

Maximum Power Dissipationa

TA = 85_C

PD

1.0

0.6

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 5 sec

R

45

62.5

Maximum Junction-to-Ambienta

Steady State

RthJA

90

110

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

25

30

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

Numéro de pièce similaire - SI3867DV

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI3867DV	100Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. C, 20-Mar-06
	SI3867DV-T1	100Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. C, 20-Mar-06
	SI3867DV-T1-E3	100Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. C, 20-Mar-06
VBsemi Electronics Co.,...	SI3867DV-T1-GE3	450Kb / 9P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI3867DV	100Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. C, 20-Mar-06

More results

Description similaire - SI3867DV

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI9400DY	58Kb / 4P	P-Channel 20-V (D-S) MOSFET Rev. K, 02-Mar-98
	SI9424BDY	44Kb / 5P	P-Channel 20-V (D-S) MOSFET Rev. A, 07-Oct-02
	SI8407DB	69Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. B, 17-Jan-05
	SI7401DN	240Kb / 3P	P-Channel 20-V (D-S) MOSFET 31-May-01
	SI7403BDN	106Kb / 8P	P-Channel 20-V (D-S) MOSFET Rev. A, 21-Mar-05
	SIS407DN-T1-GE3	548Kb / 13P	P-Channel 20 V (D-S) MOSFET Rev. B, 06-Sep-10
	SI4477DY-T1-GE3	261Kb / 10P	P-Channel 20-V (D-S) MOSFET Rev. A, 18-May-09
	SIA431DJ	221Kb / 9P	P-Channel 20-V (D-S) MOSFET Rev. B, 21-May-12
	SI1077X	183Kb / 8P	P-Channel 20 V (D-S) MOSFET Rev. A, 24-Dec-12
	SI5457DC	244Kb / 11P	P-Channel 20 V (D-S) MOSFET Rev. A, 06-Sep-10
Analog Power	AM4421P	423Kb / 5P	P-Channel 20-V (D-S) MOSFET

More results

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