2SC4346-Z datasheet(3/5 Pages) NEC

No de pièce	2SC4346-Z

Description	NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING

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Data Sheet D17082EJ2V0DS

3

2SC4346,4346-Z

TYPICAL CHARACTERISTICS (TA = 25°C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

FORWARD BIAS SAFE OPERATING AREA

With infinite heatsink

(TC = 25˚C)

Mounted on print board

(Note) 2SC4346-Z

Mounted on ceramic

subsutrate of 7.5 mm

2

x 0.7 mm

(Note)

0

2

4

6

8

10

12

50

100

150

200

TA - Ambient Temperature - °C

0.01

1

10

100

1000

0.1

1.0

10

PW = 1

µs

IC(DC)

IC(pulse)

Power Dissipation Limited

s/b Limited

TC = 25

˚C

10

µs

100

µs

1 ms

10 ms

VCE - Collector to Emitter Voltage - V

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

DC CURRENT GAIN vs. COLLECTOR CURRENT

0

1

234

5

0

0.4

0.8

1.2

1.6

2.0

IB = 100 mA

90 mA

80 mA

70 mA

60 mA

50 mA

40 mA

30 mA

20 mA

10 mA

VCE - Collector to Emitter Voltage - V

0.01

0.001

VCE = 5 V

Pulsed

0.1

1

10

100

IC - Collector Current - A

COLLECTOR AND BASE SATURATION VOLTAGE vs.

COLLCTOR CURRENT

TURN-ON, STORAGE TIME AND FALL TIME vs.

COLLECTOR CURRENT

0.01

0.001

0.1

1.0

10

1

10

IC = 5 x IB

Pulsed

VBE(sat)

VCE(sat)

IC - Collector Current - A

0.1

1

10

0.1

1

VCC = 200 V

IC : IB1 : IB2 = 10 : 1 :

−2

Pulsed

tstg

tf

ton

IC - Collector Current - A

Numéro de pièce similaire - 2SC4346-Z

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	2SC4346-Z	271Kb / 7P	SILICON POWER TRANSISTOR 2004

More results

Description similaire - 2SC4346-Z

Fabricant	No de pièce	Fiches technique	Description
NEC	2SC4942	115Kb / 6P	NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
	2SC3569	128Kb / 6P	NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
	2SC2335	114Kb / 6P	NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
Renesas Technology Corp	2SC4942	240Kb / 8P	NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
NEC	2SA1871	116Kb / 6P	PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
Renesas Technology Corp	2SA1871	241Kb / 8P	PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
KEC(Korea Electronics)	MJE13003	381Kb / 2P	TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING)
NEC	2SD1592	89Kb / 4P	NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
KEC(Korea Electronics)	KTC4372	356Kb / 3P	TRIPLE DIFFUSED NPN TRANSISTOR(HIGH VOLTAGE SWITCHING)
Hitachi Semiconductor	2SC1706	49Kb / 1P	SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING

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