2SJ603-ZJ datasheet(5/8 Pages) NEC

No de pièce	2SJ603-ZJ

Description	MOS FIELD EFFECT TRANSISTOR

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Data Sheet D14648EJ3V0DS

5

2SJ603

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

−50

0

50

100

150

ID = –13 A

100

80

60

40

20

0

–10 V

VGS = –4.0 V

Pulsed

–4.5V

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

–1.0

0

–1.5

VSD - Source to Drain Voltage - V

–0.5

Pulsed

–0.01

–0.1

–1

–10

–100

0 V

VGS = –10 V

–4.0 V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

10

100

1000

10000

–0.1

–1

–10

VGS = 0 V

f = 1 MHz

Coss

Crss

Ciss

–100

SWITCHING CHARACTERISTICS

ID - Drain Current - A

10

1

–1

–0.1

100

1000

–10

–100

tf

tr

td(on)

td(off)

VDD = –30 V

VGS = –10 V

RG = 0

Ω

REVERSE RECOVERY TIME vs.

DRAIN CURRENT

IF - Drain Current - A

di/dt = 100 A/ s

VGS = 0 V

1

0.1

10

1

10

100

1000

100

µ

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

QG - Gate Charge - nC

0

10

15

5

2025303540

–60

–50

–40

–30

–20

–10

0

VDS

VDD = –48 V

–30 V

–12 V

ID = –25 A

–12

–10

–8

–6

–4

–2

0

VGS

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