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IKW40T120 Fiches technique(PDF) 9 Page - Infineon Technologies AG

No de pièce IKW40T120
Description  LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW40T120 Fiches technique(HTML) 9 Page - Infineon Technologies AG

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IKW40T120
^
TrenchStop Series
Power Semiconductors
9
Preliminary / Rev. 1 Jul-02
0nC
50nC
100nC
150nC
200nC
250nC
0V
5V
10V
15V
960V
240V
0V
10V
20V
10pF
100pF
1nF
C
rss
C
oss
C
iss
QGE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=40 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
12V
14V
16V
0µs
5µs
10µs
15µs
12V
14V
16V
18V
0A
100A
200A
300A
VGE, GATE-EMITTETR VOLTAGE
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ≤ 600V, Tj ≤ 150°C)


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