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2SJ598 Fiches technique(PDF) 7 Page - NEC |
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2SJ598 Fiches technique(HTML) 7 Page - NEC |
7 / 8 page Data Sheet D14656EJ4V0DS 7 2SJ598 PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3) 2) TO-252 (MP-3Z) 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2 13 6.5 ±0.2 5.0 ±0.2 4 2.3 2.3 0.5 ±0.1 2.3 ±0.2 1.1 ±0.2 0.5 −0.1 +0.2 0.5 −0.1 +0.2 1. Gate 2. Drain 3. Source 4. Fin (Drain) 12 3 4 6.5 ±0.2 5.0 ±0.2 2.3 2.3 0.9 MAX. 2.3 ±0.2 0.5 ±0.1 0.8 MAX. 0.8 1.1 ±0.2 EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. |
Numéro de pièce similaire - 2SJ598 |
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Description similaire - 2SJ598 |
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