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4N25 Datasheet(Fiches technique) 3 Page - Infineon Technologies AG

Numéro de pièce 4N25
Description  Industry Standard Single Channel 6 Pin DIP Optocoupler
Télécharger  6 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

4N25 Datasheet(HTML) 3 Page - Infineon Technologies AG

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 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
Phototransistor, Industry Standard
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–55
March 27, 2000-00
4N35/36/37/38—Characteristics TA=25°C
* Indicates JEDEC registered value
H11A1 through H11A5—Characteristics TA=25°C
Emitter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage*
VF
0.9
1.3
1.5
1.7
V
IF=10 mA
IF=10 mA, TA=–55°C
Reverse Current*
IR
0.1
10
µA
VR=6.0 V
Capacitance
CO
25
pF
VR=0, f=1.0 MHz
Detector
Breakdown Voltage, Collector-Emitter*
4N35/36/37
BVCEO
30
——
V
IC=1.0 mA
4N38
80
——
Breakdown Voltage, Emitter-Collector*
BVECO
7.0
——
V
IE=100 µA
Breakdown Voltage, Collector-Base*
4N35/36/37
BVCBO
70
——
V
IC=100 µA, IB=1.0 µA
4N38
80
———
Leakage Current, Collector-Emitter*
4N35/36/37
ICEO
5.0
50
nA
VCE=10 V, IF=0
4N38
——
50
VCE=60 V, IF=0
Leakage Current, Collector-Emitter*
4N35/36/37
ICEO
——
500
µA
VCE=30 V, IF=0, TA=100°C
4N38
6.0
VCE=60 V, IF=0, TA=100°C
Capacitance, Collector-Emitter
CCE
6.0
pF
VCE=0
Package
DC Current Transfer Ratio*
4N35/36/37
CTR
100
——
%
VCE=10 V, IF=10 mA,
4N38
20
——
VCE=1.0 V, IF=20 mA
DC Current Transfer Ratio*
4N35/36/37
CTR
40
50
%
VCE=10 V, IF=10 mA,
TA=–55 to 100°C
4N38
——
30
——
Resistance, Input to Output*
RIO
1011
——
VIO=500 V
Coupling Capacitance
CIO
0.5
pF
f=1.0 MHz
Switching Time*
tON, tOFF
10
µs
IC=2.0 mA, RL=100 Ω, VCC=10 V
Emitter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage
H11A1–H11A4
VF
1.1
1.5
V
IF=10 mA
H11A5
1.1
1.7
Reverse Current
IR
——
10
µA
VR=3.0 V
Capacitance
C0
50
pF
VR=0, f=1.0 MHz
Detector
Breakdown Voltage, Collector-Emitter
BVCEO
30
——
V
IC=1.0 mA, IF=0 mA
Breakdown Voltage, Emitter-Collector
BVECO
7.0
——
V
IE=100 µA, IF=0 mA
Breakdown Voltage, Collector-Base
BVCBO
70
——
V
IC=10 µA, IF=0 mA
Leakage Current, Collector-Emitter
ICEO
5.0
50
nA
VCE=10 V, IF=0 mA
Capacitance, Collector-Emitter
CCE
6.0
pF
VCE=0
Package
DC Current Transfer Ratio
H11A1
CTR
50
——
%
VCE=10 V, IF=10 mA
H11A2/3
20
——
H11A4
10
——
H11A5
30
——
Saturation Voltage, Collector-Emitter
VCEsat
——
0.4
V
ICE=0.5 mA, IF=10 mA
Capacitance, Input to Output
CIO
0.5
pF
Switching Time
tON, tOFF
3.0
µs
IC=2.0 mA, RL=100 Ω, VCE=10 V


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