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SIDC59D170H Fiches technique(PDF) 2 Page - Infineon Technologies AG

No de pièce SIDC59D170H
Description  Fast Switching Diode Chip in EMCON3-Technology
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SIDC59D170H Fiches technique(HTML) 2 Page - Infineon Technologies AG

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Preliminary
SIDC59D170H
Edited by INFINEON Technologies AI PS DD HV3, L 4481A, Edition 1, 22.10.2001
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
VRRM
1700
V
Continuous forward current limited by
Tjmax
I F
100
Single pulse forward current
(depending on wire bond configuration)
I FSM
tP = 10 ms sinusoidal
tbd
Maximum repetitive forward current
limited by Tjmax
I FRM
200
A
Operating junction and storage
temperature
T j , T stg
-55...+150
°C
Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Reverse leakage current
I R
VR =1700V
T j =25
°C
250
µA
Cathode-Anode
breakdown Voltage
VBr
I R =0.25mA
T j =25°C
1700
V
Forward voltage drop
VF
I F =100A
T j =25
°C
1.8
V
Dynamic Electrical Characteristics, at Tj = 25
°C, unless otherwise specified, tested at component
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
t rr1
I F =100A
T j = 25 °C
tbd
Reverse recovery time
t rr2
di/ dt=----A/
µs
V R =---V
T j = 125 °C
ns
I RRM1
T j = 25 °C
tbd
Peak recovery current
I RRM2
I F =100A
di/ dt=----A/
µs
V R =---V
T j = 125 °C
tbd
A
Q rr1
T j =25
°C
tbd
Reverse recovery charge
Q rr2
I F =100A
di/ dt=----A/
µs
V R =---V
T j =125
°C
tbd
µC
di rr1/ dt
T j =25
°C
tbd
Peak rate of fall of reverse
recovery current
di rr2/ dt
I F =100A
di/ dt=----A/
µs
V R =---V
T j =125
°C
A/
µs
S1
T j =25
°C
tbd
Softness
S2
I F =100A
di/ dt=----A/
µs
V R =---V
T j =125
°C
1


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Numéro de composants électroniques

No de pièceDescriptionHtml ViewFabricant
SIDC02D60C6 Fast switching diode chip in EMCON 3 -Technology 1  2  3  4  Infineon Technologies AG
SIDC08D120F6 Fast switching diode chip in EMCON-Technology 1  2  3  4  Infineon Technologies AG
SIDC26D60C6 Fast switching diode chip in EMCON 3 -Technology 1  2  3  4  Infineon Technologies AG
SIDC56D120F6 Fast switching diode chip in EMCON-Technology 1  2  3  4  Infineon Technologies AG
SIDC02D60F6 Fast switching diode chip in EMCON-Technology 1  2  3  4  Infineon Technologies AG
SIDC08D120H6 Fast switching diode chip in EMCON-Technology 1  2  3  4  Infineon Technologies AG
SIDC30D60E6 Fast switching diode chip in EMCON-Technology 1  2  3  4  Infineon Technologies AG
SIDC56D170E6 Fast switching diode chip in EMCON-Technology 1  2  3  4  Infineon Technologies AG
SIDC03D60C6 Fast switching diode chip in EMCON 3 -Technology 1  2  3  4  Infineon Technologies AG
SIDC09D60E6 Fast switching diode chip in EMCON-Technology 1  2  3  4  Infineon Technologies AG

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