SI7423DN datasheet(2/3 Pages) VISHAY

No de pièce	SI7423DN

Description	P-Channel 30-V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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SPICE Device Model Si7423DN

Vishay Siliconix

www.vishay.com

Document Number: 72636

2

24-May-04

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

1.8

V

On-State Drain Current

b

ID(on)

VDS = −5 V, VGS = −10 V

60

A

VGS = −10 V, ID = −11.7 A

0.014

Drain-Source On-State Resistance

b

rDS(on)

VGS = −4.5 V, ID = −9 A

0.023

Ω

Forward Transconductance

b

gfs

VDS = −15 V, ID = −11.7 A

29

S

Diode Forward Voltage

b

VSD

IS = −3.2 A, VGS = 0 V

−0.83

−0.76

V

Dynamic

a

Total Gate Charge

Qg

34

37.5

Gate-Source Charge

Qgs

5.8

Gate-Drain Charge

Qgd

VDS = −15 V, VGS = −10 V, ID = −11.7 A

9.6

nC

Turn-On Delay Time

td(on)

15

11

Rise Time

tr

11

10

Turn-Off Delay Time

td(off)

72

74

Fall Time

tf

VDD = −15 V, RL = 15 Ω

ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω

25

50

ns

Notes

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

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Fabricant	No de pièce	Fiches technique	Description
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