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2SD0966 Datasheet(Fiches technique) 1 Page - Panasonic Semiconductor

Numéro de pièce 2SD0966
Description  For Low-Frequency Amplification
Télécharger  3 Pages
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD0966 Datasheet(HTML) 1 Page - Panasonic Semiconductor

  2SD0966 Datasheet HTML 1Page - Panasonic Semiconductor 2SD0966 Datenblatt HTML 2Page - Panasonic Semiconductor 2SD0966 Datenblatt HTML 3Page - Panasonic Semiconductor  
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Transistors
1
Publication date: April 2003
SJC00201BED
2SD0966 (2SD966)
Silicon NPN epitaxial planar type
For low-frequency amplification
For stroboscope
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Satisfactory operation performances at high efficiency with the low-
voltage power supply.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
40
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
5A
Peak collector current
ICP
8A
Collector power dissipation
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 020
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 07
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 10 V, I
E
= 0
0.1
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 7 V, IC = 0
0.1
µA
Forward current transfer ratio *
1
hFE1 *
2
VCE = 2 V, IC = 0.5 A
180
600
hFE
VCE = 2 V, IC = 2 A
150
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 3 A, IB = 0.1 A
1
V
Transition frequency
fT
VCB = 6 V, IE = −50 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
50
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
5.9±0.2
0.7±0.1
4.9±0.2
2.54±0.15
(1.27)
(1.27)
0.45
+0.2
–0.1
0.45
+0.2
–0.1
13
2
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
TO-92L-A1 Package
Rank
P
Q
R
hFE1
180 to 270
230 to 380
340 to 600
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Note) The part number in the parenthesis shows conventional part number.


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Numéro de composants électroniques

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