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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF6610 Fiches technique(PDF) 2 Page - International Rectifier |
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IRF6610 Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF6610 2 www.irf.com Pulse width ≤ 400µs; duty cycle ≤ 2%. Repetitive rating; pulse width limited by max. junction temperature. Notes: Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 15 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 5.2 6.8 m Ω ––– 8.2 10.7 VGS(th) Gate Threshold Voltage 1.65 2.1 2.55 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -5.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 41 ––– ––– S Qg Total Gate Charge ––– 11 17 Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.9 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.3 ––– nC Qgd Gate-to-Drain Charge ––– 3.6 ––– Qgodr Gate Charge Overdrive ––– 2.4 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 4.9 ––– Qoss Output Charge ––– 5.9 ––– nC RG Gate Resistance ––– 2.0 ––– Ω td(on) Turn-On Delay Time ––– 12 ––– tr Rise Time ––– 51 ––– td(off) Turn-Off Delay Time ––– 15 ––– ns tf Fall Time ––– 5.7 ––– Ciss Input Capacitance ––– 1520 ––– Coss Output Capacitance ––– 440 ––– pF Crss Reverse Transfer Capacitance ––– 220 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 2.8 (Body Diode) A ISM Pulsed Source Current ––– ––– 120 (Body Diode) VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 12 18 ns Qrr Reverse Recovery Charge ––– 2.4 3.6 nC di/dt = 100A/µs TJ = 25°C, IS = 12A, VGS = 0V showing the integral reverse p-n junction diode. VGS = 4.5V, ID = 12A VDS = VGS, ID = 250µA TJ = 25°C, IF = 12A VGS = 4.5V ID = 12A VGS = 0V VDS = 10V ID = 12A VDD = 16V, VGS = 4.5V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 15A VGS = 20V VGS = -20V VDS = 16V, VGS = 0V VDS = 10V VDS = 16V, VGS = 0V, TJ = 125°C MOSFET symbol Clamped Inductive Load VDS = 10V, ID = 12A Conditions ƒ = 1.0MHz VDS = 10V, VGS = 0V |
Numéro de pièce similaire - IRF6610 |
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Description similaire - IRF6610 |
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