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2SD0946B Datasheet(Fiches technique) 1 Page - Panasonic Semiconductor

Numéro de pièce 2SD0946B
Description  For Low-Frequency Amplification
Télécharger  3 Pages
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD0946B Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Power Transistors
1
Publication date: May 2003
SJD00164BED
2SD0946 (2SD946), 2SD0946A (2SD946A),
2SD0946B (2SD946B)
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
• Forward current transfer ratio h
FE is designed high, which is appro-
priate to the driver circuit of motors and printer hammer.
• A shunt resistor is omitted from the driver.
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD0946
VCBO
30
V
(Emitter open)
2SD0946A
60
2SD0946B
100
Collector-emitter voltage 2SD0946
VCEO
25
V
(Base open)
2SD0946A
50
2SD0946B
80
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SD0946
VCBO
IC = 100 µA, IE = 030
V
(Emitter open)
2SD0946A
60
2SD0946B
100
Collector-emitter voltage
2SD1263
VCEO
IC = 1 mA, IB = 025
V
(Base open)
2SD0946A
50
2SD0946B
80
Emitter-base voltage (Collector open)
VEBO
IE = 100 µA, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 25 V, I
E
= 0
0.1
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 4 V, IC = 0
0.1
µA
Forward current transfer ratio *
1, 2
hFE
VCE = 10 V, IC = 1 A
4 000
40 000
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 1 A, I
B
= 1 mA
1.8
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 1 A, IB = 1 mA
2.2
V
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
150
MHz
8.0
+0.5
–0.1
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1
1.76±0.1
123
φ 3.16±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Note) The part numbers in the parenthesis show conventional part number.
Internal Connection
B
≈ 200 Ω
C
E


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