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2SD0958 Datasheet(Fiches technique) 1 Page - Panasonic Semiconductor

Numéro de pièce 2SD0958
Description  For Low-Frequency And Low-Noise Amplification
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD0958 Datasheet(HTML) 1 Page - Panasonic Semiconductor

  2SD0958 Datasheet HTML 1Page - Panasonic Semiconductor 2SD0958 Datenblatt HTML 2Page - Panasonic Semiconductor 2SD0958 Datenblatt HTML 3Page - Panasonic Semiconductor  
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Transistors
1
Publication date: November 2002
SJC00199BED
2SD0958 (2SD958)
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SB0788 (2SB788)
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Low noise voltage NV
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
120
V
Collector-emitter voltage (Base open)
VCEO
120
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
20
mA
Peak collector current
ICP
50
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 µA, I
E
= 0
120
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
120
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 07
V
Collector-base cut-off current (Emitter open)
ICBO
VCB
= 50 V, I
E
= 0
100
nA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 01
µA
Forward current transfer ratio *
hFE
VCE = 5 V, IC = 2 mA
180
700
Collector-emitter saturation voltage
VCE(sat)
IC
= 20 mA, I
B
= 2 mA
0.6
V
Transition frequency
fT
VCB = 5 V, IE = −2 mA, f = 200 MHz
200
MHz
Noise voltage
NV
VCE = 40 V, IC = 1 mA, GV = 80 dB
150
mV
Rg = 100 kΩ, Function = FLAT
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
(2.5)
21
3
R 0.7
R 0.9
(1.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Rank
R
S
T
hFE
180 to 360
260 to 520
360 to 700
Note) The part number in the parenthesis shows conventional part number.


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