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2SD0638 Datasheet(Fiches technique) 1 Page - Panasonic Semiconductor

Numéro de pièce 2SD0638
Description  For Medium-Power General Amplification
Télécharger  3 Pages
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD0638 Datasheet(HTML) 1 Page - Panasonic Semiconductor

  2SD0638 Datasheet HTML 1Page - Panasonic Semiconductor 2SD0638 Datenblatt HTML 2Page - Panasonic Semiconductor 2SD0638 Datenblatt HTML 3Page - Panasonic Semiconductor  
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Transistors
1
Publication date: November 2002
SJC00193BED
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification
Complementary to 2SB0643 (2SB643)
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
25
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
0.5
A
Peak collector current
ICP
1A
Collector power dissipation *
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 030
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 025
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 µA, I
C
= 07
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
µA
Base-emitter saturation voltage
ICEO
VCE = 20 V, IB = 01
µA
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 10 mA
85
340
hFE2
VCE = 10 V, IC = 500 mA
40
90
Collector-emitter saturation voltage
VCE(sat)
IC = 300 mA, IB = 30 mA
0.35
0.6
V
Transition frequency
fT
VCB
= 10 V, I
E
= −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
6
15
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
(2.5)
21
3
R 0.7
R 0.9
(1.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) The part number in the parenthesis shows conventional part number.


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Numéro de composants électroniques

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2SB1462JFor general amplification 1 2 3 Panasonic Semiconductor
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2SD638Silicon NPN epitaxial planer type For medium-power general amplification 1 2 Panasonic Semiconductor
2SB0643For low-frequency general amplification 1 2 3 Panasonic Semiconductor
2SB0726For general amplification 1 2 3 Panasonic Semiconductor
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2SA0879For general amplification Complementary to 2SC1573 1 2 3 4 Panasonic Semiconductor

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