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2SB0819 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SB0819
Description  For Low-Frequency Output Amplification
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SB0819 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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Transistors
1
Publication date: November 2002
SJC00059BED
2SB0819 (2SB819)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1051
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Large collctor power dissipation P
C
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Note) The part number in the parenthesis shows conventional part number.
Rank
Q
R
hFE
80 to 160
120 to 220
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
(2.5)
21
3
R 0.7
R 0.9
(1.5)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−50
V
Collector-emitter voltage (Base open)
VCEO
−40
V
Emitter-base voltage (Collector open)
VEBO
−5V
Collector current
IC
−1.5
A
Peak collector current
ICP
−3A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = −1 mA, IE = 0
−50
V
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−40
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= −20 V, I
E
= 0
−1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = −10 V, IB = 0
−100
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −5 V, IC = 0
−10
µA
Forward current transfer ratio *
1, 2
hFE
VCE
= −5 V, I
C
= −1 A
80
220
Collector-emitter saturation voltage *
1
VCE(sat)
IC = −1.5 A, IB = − 0.15 A
−1V
Base-emitter saturation voltage *
1
VBE(sat)
IC = −2 A, IB = − 0.2 A
−1.5
V
Transition frequency
fT
VCB
= −5 V, I
E
= 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB = −20 V, IE = 0, f = 1 MHz
45
pF
(Common base, input open circuited)
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion


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