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2SB0643 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SB0643
Description  For low-frequency general amplification
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SB0643 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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Transistors
1
Publication date: January 2003
SJC00046CED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SB0643
VCBO
IC
= −10 µA, I
E
= 0
−30
V
(Emitter open)
2SB0644
−60
Collector-emitter voltage
2SB0643
VCEO
IC = −2 mA, IB = 0
−25
V
(Base open)
2SB0644
−50
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−7V
Collector-base cutoff current (Emitter open)
ICBO
VCB = −20 V, IE = 0
− 0.1
µA
Collector-Emitter cutoff current (Base open)
ICEO
VCE
= −20 V, I
B
= 0
−1
µA
Forward current transfer ratio *
1
hFE1 *
2
VCE = −10 V, IC = −10 mA
85
340
hFE2
VCE = −10 V, IC = −500 mA
40
90
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= −300 mA, I
B
= −30 mA
− 0.35 − 0.6
V
Transition frequency
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
6
15
pF
(Common base, input open circuited)
2SB0643, 2SB0644 (2SB643, 2SB644)
Silicon PNP epitaxial planar type
For low-frequency general amplification
■ Features
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
(2.5)
21
3
R 0.7
R 0.9
(1.5)
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0643
VCBO
−30
V
(Emitter open)
2SB0644
−60
Collector-emitter voltage 2SB0643
VCEO
−25
V
(Base open)
2SB0644
−50
Emitter-base voltage (Collector open)
VEBO
−7V
Collector current
IC
− 0.5
A
Peak collector current
ICP
−1A
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package


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