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2SA0720A Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SA0720A
Description  For low-frequency driver amplification Complementary
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SA0720A Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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Transistors
1
Publication date: March 2003
SJC00003BED
2SA0720A (2SA720A)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC1318A
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−80
V
Collector-emitter voltage (Base open)
VCEO
−70
V
Emitter-base voltage (Collector open)
VEBO
−5V
Collector current
IC
− 0.5
A
Peak collector current
ICP
−1A
Collector power dissipation
PC
625
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= −10 µA, I
E
= 0
−80
V
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−70
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−5V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= −20 V, I
E
= 0
− 0.1
µA
Forward current transfer ratio *
1
hFE1 *
2
VCE = −10 V, IC = −150 mA
85
240
hFE2
VCE = −10 V, IC = −500 mA
40
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= −300 mA, I
B
= −30 mA
− 0.2
− 0.6
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = −300 mA, IB = −30 mA
− 0.85 −1.50
V
Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
20
30
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
Rank
Q
R
hFE1
85 to 170
120 to 240
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurment
*2: Rank classification
Note) The part number in the parenthesis shows conventional part number.


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