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2PA1774M Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce 2PA1774M
Description  PNP general purpose transistor
Download  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2PA1774M Fiches technique(HTML) 3 Page - NXP Semiconductors

  2PA1774M Datasheet HTML 1Page - NXP Semiconductors 2PA1774M Datasheet HTML 2Page - NXP Semiconductors 2PA1774M Datasheet HTML 3Page - NXP Semiconductors 2PA1774M Datasheet HTML 4Page - NXP Semiconductors 2PA1774M Datasheet HTML 5Page - NXP Semiconductors 2PA1774M Datasheet HTML 6Page - NXP Semiconductors 2PA1774M Datasheet HTML 7Page - NXP Semiconductors 2PA1774M Datasheet HTML 8Page - NXP Semiconductors  
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2004 Feb 19
3
Philips Semiconductors
Product specification
PNP general purpose transistor
2PA1774M series
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
µm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
µm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−50
V
VCEO
collector-emitter voltage
open base
−−40
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−100
mA
ICM
peak collector current
−−200
mA
IBM
peak base current
−−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
note 1
250
mW
note 2
430
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
note 1
500
K/W
note 2
290
K/W


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