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2N5088 Fiches technique(PDF) 1 Page - ON Semiconductor |
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2N5088 Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 8 page Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 Watts mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) 2N5088 2N5089 V(BR)CEO 30 25 — — Vdc Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) 2N5088 2N5089 V(BR)CBO 35 30 — — Vdc Collector Cutoff Current (VCB = 20 Vdc, IE = 0) 2N5088 (VCB = 15 Vdc, IE = 0) 2N5089 ICBO — — 50 50 nAdc Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) IEBO — — 50 100 nAdc 1. R θJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. ON Semiconductort © Semiconductor Components Industries, LLC, 2001 November, 2001 – Rev. 1 1 Publication Order Number: 2N5088/D 2N5088 2N5089 CASE 29–11, STYLE 1 TO–92 (TO–226AA) 1 2 3 COLLECTOR 3 2 BASE 1 EMITTER |
Numéro de pièce similaire - 2N5088 |
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Description similaire - 2N5088 |
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