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2N4401RLRP Fiches technique(PDF) 1 Page - ON Semiconductor |
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2N4401RLRP Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 8 page © Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 1 1 Publication Order Number: 2N4401/D 2N4401 Preferred Device General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 60 Vdc Emitter − Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 W mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO−92 CASE 29 STYLE 1 3 2 1 Preferred devices are recommended choices for future use and best overall value. Y = Year WW = Work Week MARKING DIAGRAM 2N 4401 YWW See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ORDERING INFORMATION http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER |
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