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XN04601 Fiches technique(PDF) 2 Page - Panasonic Semiconductor

No de pièce XN04601
Description  Silicon PNP epitaxial planer transistor For general amplification
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

XN04601 Fiches technique(HTML) 2 Page - Panasonic Semiconductor

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2
Composite Transistors
I Electrical Characteristics (Ta=25˚C)
G Tr1
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
60
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
Emitter to base voltage
VEBO
IE = 10
µA, I
C = 0
7
V
Collector cutoff current
ICBO
VCB = 20V, IE = 0
0.1
µA
ICEO
VCE = 10V, IB = 0
100
µA
Forward current transfer ratio
hFE
VCE = 10V, IC = 2mA
160
460
Collector to emitter saturation voltage
VCE(sat)
IC = 100mA, IB = 10mA
0.1
0.3
V
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
150
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
3.5
pF
G Tr2
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–60
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
Emitter to base voltage
VEBO
IE = –10
µA, I
C = 0
–7
V
Collector cutoff current
ICBO
VCB = –20V, IE = 0
– 0.1
µA
ICEO
VCE = –10V, IB = 0
–100
µA
Forward current transfer ratio
hFE
VCE = –10V, IC = –2mA
160
460
Collector to emitter saturation voltage
VCE(sat)
IC = –100mA, IB = –10mA
–0.3
–0.5
V
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
80
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
2.7
pF
XN04601


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