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IRFAC30 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRFAC30
Description  REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFAC30 Fiches technique(HTML) 2 Page - International Rectifier

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IRFAC30
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
1.67
RthJA
Junction to Ambient
30
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
3.6
ISM
Pulse Source Current (Body Diode) ➀
——
1 4
VSD
Diode Forward Voltage
1.6
V
Tj = 25°C, IS =3.6A, VGS = 0V ➃
trr
Reverse Recovery Time
810
nS
Tj = 25°C, IF = 3.6A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
4.2
µC
VDD ≤ 50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
6 00
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.70
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
2.2
VGS = 10V, ID = 2.3A➃
Resistance
2.5
VGS = 10V, ID =3.6A ➃
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID =250µA
gfs
Forward Transconductance
2.4
S ( )VDS > 15V, IDS = 2.3A ➃
IDSS
Zero Gate Voltage Drain Current
2 5
VDS= 480V,VGS=0V
250
VDS =480V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
1 6
3 8
VGS = 10V, ID = 3.6A
Qgs
Gate-to-Source Charge
2.0
4.6
nC
VDS = 300V
Qgd
Gate-to-Drain (‘Miller’) Charge
7.5
1 7
td(on)
Turn-On Delay Time
1 7
VDD =300V, ID =3.6A,
t r
Rise Time
2 0
RG =7.5Ω
td(off)
Turn-Off Delay Time
5 3
tf
Fall Time
2 1
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
630
VGS = 0V, VDS = 25V
Coss
Output Capacitance
8 0
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
1 5
nA
nH
ns
µA
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)


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