SI7888DP datasheet(4/5 Pages) VISHAY

No de pièce	SI7888DP

Description	N-Channel 30-V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Si7888DP

Vishay Siliconix

www.vishay.com

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Document Number: 71876

S-31727—Rev. B, 18-Aug-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

- 1.0

- 0.8

- 0.6

- 0.4

- 0.2

- 0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 mA

Threshold Voltage

TJ - Temperature (_C)

10-3

10-2

1

10

600

10-1

10-4

100

0.01

0

1

50

20

30

10

600

0.1

Single Pulse Power

Time (sec)

10

40

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 55_C/W

3. TJM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

100

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

TC = 25_C

Single Pulse

P(t) = 10

dc

0.1

IDM Limited

ID(on)

Limited

rDS(on) Limited

BVDSS Limited

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

P(t) = 0.0001

Numéro de pièce similaire - SI7888DP

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI7880ADP	304Kb / 13P	N-Channel 30-V (D-S) MOSFET Rev. B, 03-Mar-08
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Description similaire - SI7888DP

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Nov-98
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