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KFM1G16Q2M-DEB6 Fiches technique(PDF) 8 Page - Samsung semiconductor

No de pièce KFM1G16Q2M-DEB6
Description  MuxOneNAND FLASH MEMORY
Download  124 Pages
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KFM1G16Q2M-DEB6 Fiches technique(HTML) 8 Page - Samsung semiconductor

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MuxOneNAND1G(KFM1G16Q2M-DEB5)
FLASH MEMORY
8
MuxOneNAND2G(KFN2G16Q2M-DEB5)
MuxOneNAND
‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device includes con-
trol logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot code buffering (BootRAM) and
4KB for data buffering (DataRAM), split between 2 independent buffers. It has a x16 Host Interface and a random access time speed
of ~76ns.
The device operates up to a maximum host-driven clock frequency of 54MHz for synchronous reads at Vcc(or Vccq. Refer to chapter
4.2) with minimum 4-clock latency. Below 40MHz it is accessible with minimum 3-clock latency. Appropriate wait cycles are deter-
mined by programmable read latency.
MuxOneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector counter
register. The device includes one block-sized OTP (One Time Programmable) area that can be used to increase system security or
to provide identification capabilities.
1.6
General Overview


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