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2SD2623 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SD2623
Description  For low-frequency amplification
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD2623 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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Transistors
1
Publication date: February 2003
SJC00284BED
2SD2623
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• Low ON resistance R
on
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
25
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
12
V
Collector current
IC
0.5
A
Peak collector current
ICP
1A
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 µA, I
E
= 025
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 020
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 012
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 25 V, I
E
= 0
100
nA
Forward current transfer ratio *
1, 2
hFE
VCE = 2 V, IC = 0.5 A
200
800
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 0.5 A, IB = 20 mA
0.14
0.40
V
Base-emitter saturation voltage *
1
VBE(sat)
IC
= 0.5 A, I
B
= 50 mA
1.2
V
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
(Common base, input open circuited)
ON resistanse *
3
Ron
1.0
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1
3
2
(0.65) (0.65)
0.15
+0.10
–0.05
10˚
1 : Base
2 : Emitter
3 : Collector
EIAJ: SC-70
SMini3-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
*3: Ron Measuremet circuit
Rank
R
S
T
hFE
200 to 350
300 to 500
400 to 800
VV
1 k
Ron
=
VB
× 1000 (Ω)
VA
− V
B
f
= 1 kHz
V
= 0.3 V
VB
IB
= 1 mA
VA
Marking Symbol: 2V


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