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74HC283PW Fiches technique(PDF) 11 Page - NXP Semiconductors |
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74HC283PW Fiches technique(HTML) 11 Page - NXP Semiconductors |
11 / 20 page 9397 750 13811 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 03 — 11 November 2004 11 of 20 Philips Semiconductors 74HC283 4-bit binary full adder with fast carry [1] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; ∑(CL × VCC2 × fo) sum of outputs. Tamb = −40 °C to +125 °C tPHL, tPLH propagation delay CIN to S1 see Figure 6 VCC = 2.0 V - - 240 ns VCC = 4.5 V - - 48 ns VCC = 6.0 V - - 41 ns propagation delay CIN to S2 see Figure 6 VCC = 2.0 V - - 270 ns VCC = 4.5 V - - 54 ns VCC = 6.0 V - - 46 ns propagation delay CIN to S3 see Figure 6 VCC = 2.0 V - - 295 ns VCC = 4.5 V - - 59 ns VCC = 6.0 V - - 50 ns propagation delay CIN to S4 see Figure 6 VCC = 2.0 V - - 345 ns VCC = 4.5 V - - 69 ns VCC = 6.0 V - - 59 ns propagation delay An or Bn to Sn see Figure 6 VCC = 2.0 V - - 315 ns VCC = 4.5 V - - 63 ns VCC = 6.0 V - - 54 ns propagation delay CIN to COUT see Figure 6 VCC = 2.0 V - - 295 ns VCC = 4.5 V - - 59 ns VCC = 6.0 V - - 50 ns propagation delay An or Bn to COUT see Figure 6 VCC = 2.0 V - - 295 ns VCC = 4.5 V - - 59 ns VCC = 6.0 V - - 50 ns tTHL, tTLH output transition time see Figure 6 VCC = 2.0 V - - 110 ns VCC = 4.5 V - - 22 ns VCC = 6.0 V - - 19 ns Table 8: Dynamic characteristics …continued GND = 0 V; tr =tf = 6 ns; CL = 50 pF; see Figure 7. Symbol Parameter Conditions Min Typ Max Unit |
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