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NV25010WF Fiches technique(PDF) 3 Page - ON Semiconductor

No de pièce NV25010WF
Description  EEPROM Serial 1/2/4-Kb SPI
Download  12 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NV25010WF Fiches technique(HTML) 3 Page - ON Semiconductor

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NV25010WF, NV25020WF, NV25040WF
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3
Table 5. AC CHARACTERISTICS (TA = −40°C to +125°C) (Note 4)
Symbol
Parameter
VCC = 1.8 V − 5.5 V
VCC = 2.5 V − 5.5 V
Unit
Min
Max
Min
Max
fSCK
Clock Frequency
DC
5
DC
10
MHz
tSU
Data Setup Time
20
10
ns
tH
Data Hold Time
20
10
ns
tWH
SCK High Time
75
40
ns
tWL
SCK Low Time
75
40
ns
tLZ
HOLD to Output Low Z
50
25
ns
tRI (Note 5)
Input Rise Time
2
2
ms
tFI (Note 5)
Input Fall Time
2
2
ms
tHD
HOLD Setup Time
0
0
ns
tCD
HOLD Hold Time
10
10
ns
tV
Output Valid from Clock Low
80
35
ns
tHO
Output Hold Time
0
0
ns
tDIS
Output Disable Time
50
20
ns
tHZ
HOLD to Output High Z
100
25
ns
tCS
CS High Time
80
40
ns
tCSS
CS Setup Time
60
30
ns
tCSH
CS Hold Time
60
30
ns
tCNS
CS Inactive Setup Time
60
20
ns
tCNH
CS Inactive Hold Time
60
20
ns
tWPS
WP Setup Time
10
10
ns
tWPH
WP Hold Time
15
15
ns
tWC (Note 6)
Write Cycle Time
5
5
ms
4. AC Test Conditions:
Input Pulse Voltages: 0.3 VCC to 0.7 VCC and 0.2 VCC to 0.8 VCC at VCC = 1.8 V − 2.5 V
Input rise and fall times: ≤ 10 ns
Input and output reference voltages: 0.5 VCC
Output load: current source IOL max/IOH max; CL = 30 pF
5. This parameter is tested initially and after a design or process change that affects the parameter.
6. tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
Table 6. POWER−UP TIMING (Notes 7, 8)
Symbol
Parameter
Min
Max
Unit
tPUR
Power−up to Read Operation
0.1
1
ms
tPUW
Power−up to Write Operation
0.1
1
ms
7. This parameter is tested initially and after a design or process change that affects the parameter.
8. tPUR and tPUW are the delays required from the time VCC is stable at the operating voltage until the specified operation can be initiated.


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