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NV25010WF Fiches technique(PDF) 3 Page - ON Semiconductor |
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NV25010WF Fiches technique(HTML) 3 Page - ON Semiconductor |
3 / 12 page NV25010WF, NV25020WF, NV25040WF www.onsemi.com 3 Table 5. AC CHARACTERISTICS (TA = −40°C to +125°C) (Note 4) Symbol Parameter VCC = 1.8 V − 5.5 V VCC = 2.5 V − 5.5 V Unit Min Max Min Max fSCK Clock Frequency DC 5 DC 10 MHz tSU Data Setup Time 20 10 ns tH Data Hold Time 20 10 ns tWH SCK High Time 75 40 ns tWL SCK Low Time 75 40 ns tLZ HOLD to Output Low Z 50 25 ns tRI (Note 5) Input Rise Time 2 2 ms tFI (Note 5) Input Fall Time 2 2 ms tHD HOLD Setup Time 0 0 ns tCD HOLD Hold Time 10 10 ns tV Output Valid from Clock Low 80 35 ns tHO Output Hold Time 0 0 ns tDIS Output Disable Time 50 20 ns tHZ HOLD to Output High Z 100 25 ns tCS CS High Time 80 40 ns tCSS CS Setup Time 60 30 ns tCSH CS Hold Time 60 30 ns tCNS CS Inactive Setup Time 60 20 ns tCNH CS Inactive Hold Time 60 20 ns tWPS WP Setup Time 10 10 ns tWPH WP Hold Time 15 15 ns tWC (Note 6) Write Cycle Time 5 5 ms 4. AC Test Conditions: Input Pulse Voltages: 0.3 VCC to 0.7 VCC and 0.2 VCC to 0.8 VCC at VCC = 1.8 V − 2.5 V Input rise and fall times: ≤ 10 ns Input and output reference voltages: 0.5 VCC Output load: current source IOL max/IOH max; CL = 30 pF 5. This parameter is tested initially and after a design or process change that affects the parameter. 6. tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle. Table 6. POWER−UP TIMING (Notes 7, 8) Symbol Parameter Min Max Unit tPUR Power−up to Read Operation 0.1 1 ms tPUW Power−up to Write Operation 0.1 1 ms 7. This parameter is tested initially and after a design or process change that affects the parameter. 8. tPUR and tPUW are the delays required from the time VCC is stable at the operating voltage until the specified operation can be initiated. |
Numéro de pièce similaire - NV25010WF |
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Description similaire - NV25010WF |
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