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2SA0879 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SA0879
Description  For general amplification Complementary to 2SC1573
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SA0879 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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Transistors
1
Publication date: November 2002
SJC00006BED
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1573
■ Features
• High collector-emitter voltage (Base open) V
CEO
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−250
V
Collector-emitter voltage (Base open)
VCEO
−200
V
Emitter-base voltage (Collector open)
VEBO
−5V
Collector current
IC
−70
mA
Peak collector current
ICP
−100
mA
Collector power dissipation
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= −100 µA, I
B
= 0
−200
V
Emitter-base voltage (Collector open)
VEBO
IE = −1 µA, IC = 0
−5V
Forward current transfer ratio *
hFE
VCE = −10 V, IC = −5 mA
60
220
Collector-emitter saturation voltage
VCE(sat)
IC
= −50 mA, I
B
= −5 mA
−1.5
V
Transition frequency
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz
50
80
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
5
10
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.9±0.2
0.7±0.1
4.9±0.2
2.54±0.15
(1.27)
(1.27)
0.45
+0.2
–0.1
0.45
+0.2
–0.1
13
2
Rank
Q
R
hFE
60 to 150
100 to 220
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
TO-92L-A1 Package
Note) The part number in the parenthesis shows conventional part number.


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