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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2SK3307 Fiches technique(PDF) 2 Page - NEC |
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2SK3307 Fiches technique(HTML) 2 Page - NEC |
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2 / 8 page  Data Sheet D14129EJ3V0DS 2 2SK3307 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs |VDS = 10 V, ID = 35 A30 47 S Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 35 A7.5 9.5 m Ω RDS(on)2 VGS = 4.0 V, ID = 35 A 10.5 14 m Ω Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 4650 pF Output Capacitance Coss 780 pF Reverse Transfer Capacitance Crss 380 pF Turn-on Delay Time td(on) ID = 35 A, VGS(on) = 10 V, VDD = 30 V, 90 ns Rise Time tr RG = 10 Ω 1260 ns Turn-off Delay Time td(off) 270 ns Fall Time tf 370 ns Total Gate Charge QG ID = 70 A , VDD = 48 V, VGS = 10 V90 nC Gate to Source Charge QGS 14 nC Gate to Drain Charge QGD 24 nC Body Diode Forward Voltage VF(S-D) IF = 70 A, VGS = 0 V1.0 V Reverse Recovery Time trr IF = 70 A, VGS = 0 V, 60 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 110 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY RG = 25 Ω 50 Ω PG. L VDD VGS = 20 → 0 V BVDSS IAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. RG 0 VGS D.U.T. RL VDD τ = 1 s µ Duty Cycle ≤ 1% VGS Wave Form ID Wave Form VGS 10% 90% VGS(on) 10% 0 ID 90% 90% td(on) tr td(off) tf 10% τ ID 0 ton toff PG. 50 Ω D.U.T. RL VDD IG = 2 mA |
Numéro de pièce similaire - 2SK3307 |
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Description similaire - 2SK3307 |
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