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2SD2057 Fiches technique(PDF) 2 Page - Panasonic Semiconductor

No de pièce 2SD2057
Description  Silicon NPN triple diffusion planar type For horizontal deflection output
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD2057 Fiches technique(HTML) 2 Page - Panasonic Semiconductor

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2
Power Transistors
2SD2057
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
Area of safe operation (ASO)
Area of safe operation, horizontal operation ASO
Rth(t) —t
0
160
40
120
80
140
20
100
60
0
120
100
80
60
40
20
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) Without heat sink
(P
C=3W)
(1)
(2)
(3)
Ambient temperature Ta (˚C)
012
10
8
26
4
0
10
8
6
4
2
T
C=25˚C
I
B=1.6A
1.4A
1.2A
0.6A
0.4A
0.2A
0.8A
1A
Collector to emitter voltage V
CE
(V)
0.1
0.3
1
3
10
0.01
3
1
0.3
0.1
0.03
I
C/IB=2
T
C=–25˚C
25˚C
100˚C
Collector current I
C
(A)
0.1
0.3
1
3
10
0.01
3
1
0.3
0.1
0.03
I
C/IB=2
T
C=100˚C
25˚C
–25˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE=10V
25˚C
–25˚C
T
C=100˚C
Collector current I
C
(A)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
30
10
10ms
I
CP
I
C
Non repetitive pulse
T
C=25˚C
50ms
t=1ms
DC
Collector to emitter voltage V
CE
(V)
0
2000
1600
400
1200
800
0
24
20
16
12
8
4
<1mA
I
CP
f=15.75kHz, T
C=25˚C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
Collector to emitter voltage V
CE
(V)
10–4
10
10–3
10–1
10–2
1103
102
104
0.1
1
10
100
10000
1000
Note: R
th was measured at Ta=25˚C and under natural convection.
(1) P
T=10V × 0.3A (3W) and without heat sink
(2) P
T=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
Time t (s)


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