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2SD2057 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SD2057
Description  Silicon NPN triple diffusion planar type For horizontal deflection output
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD2057 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SD2057
Silicon NPN triple diffusion planar type
For horizontal deflection output
s Features
q
Incorporating a built-in damper diode
q
Reduction of a parts count and simplification of a circuit are al-
lowed
q
High breakdown voltage with high reliability
q
High-speed switching
q
Wide area of safe operation (ASO)
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
1500
1500
7
20
5
4
100
3
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time (L-load)
Fall time (L-load)
Diode forward voltage
Symbol
ICBO
VEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VF
Conditions
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
IE = 500mA, IC = 0
VCE = 10V, IC = 5A
IC = 5A, IB = 1.2A
IC = 5A, IB = 1.2A
VCE = 10V, IC = 1A, f = 0.5MHz
IC = 5A, IB1 = 1.2A, IB2 = –1.2A,
Lleak = 5µH
IC = –6A, IB = 0
min
7
4.5
typ
2
max
30
300
15
8
1.5
12
0.8
–2.3
Unit
µA
µA
V
V
V
MHz
µs
µs
V
TC=25°C
Ta=25
°C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(b)
15.0
±0.3
5.0
±0.2
3.2
11.0
±0.2
10.9
±0.5
5.45
±0.3
2.0
±0.2
1.1
±0.1
φ3.2±0.1
0.6
±0.2
2.0
±0.1
1
23
C
B
E


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