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NTE858M Fiches technique(PDF) 1 Page - NTE Electronics

No de pièce NTE858M
Description  Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier
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Fabricant  NTE [NTE Electronics]
Site Internet  http://www.nteinc.com
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NTE858M Fiches technique(HTML) 1 Page - NTE Electronics

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NTE858M
NTE858SM
Integrated Circuit
Dual, Low–Noise JFET–Input Operational Amplifier
Description:
The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two
state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally com-
pensated operational amplifier has well matched high voltage JFET input devices for low input offset
voltage. The BIFET technology provides wide bandwidths and fast slew rates with low input bias cur-
rents, input offset currents, and supply currents. Moreover, these devices exhibit low–noise and low
harmonic distortion making them ideal for use in high–fidelity audio amplifier applications.
Features:
D Available in Two Different Package Types:
8–Lead Mini DIP (NTE858M)
SOIC–8 Surface Mount (NTE858SM)
D Low Input Noise Voltage: 18nV√Hz Typ
D Low Harmonic Distortion: 0.01% Typ
D Low Input Bias and Offset Currents
D High Input Impedance: 1012Ω Typ
D High Slew Rate: 13V/µs Typ
D Wide Gain Bandwidth: 4MHz Typ
D Low Supply Current: 1.4mA per Amp
Absolute Maximum Ratings:
Supply Voltage
VCC
+18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VEE
–18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage, VID
±30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage Range (Note 1), VIDR
±15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Short–Circuit Duration (Note 2), tS
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, PD
680mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above TA = +47°C
10mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, TA
0
° to +70°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The magnitude of the input voltage must not exceed the magnitude of the supply voltage or
15V, whichever is less.
Note 2. The output may be shorted to GND or either supply. Temperature and/or supply voltages
must be limited to ensure that power dissipation ratungs are not exceeded.


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