STGB7NB60FD datasheet(3/11 Pages) STMICROELECTRONICS

No de pièce	STGB7NB60FD

Description	N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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STGP7NB60FD - STGB7NB60FD

ELECTRICAL CHARACTERISTICS (CONTINUED)

DYNAMIC

SWITCHING ON

SWITCHING OFF

COLLECTOR-EMITTER DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by max. junction temperature.

(**)Losses include Also the Tail (Jedec Standardization)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VCE =25 V,Ic= 7A

6S

Cies

Input Capacitance

VCE =25V,f=1 MHz,VGE =0

540

pF

Coes

Output Capacitance

80

pF

Cres

Reverse Transfer

Capacitance

13

pF

Qg

Qge

Qgc

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

VCE =480V, IC =7 A,

VGE = 15V

37

4

18

50

nC

ICL

Latching Current

Vclamp = 480 V

Tj = 125°C , RG =10 Ω

28

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VCC = 480 V, IC = 7ARG =10Ω ,

VGE =15 V

17

6

ns

(di/dt)on

Eon

Turn-on Current Slope

Turn-on Switching Losses

VCC= 480 V, IC =7 ARG=10Ω

VGE = 15 V,Tj =125°C

890

59

A/µs

µJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tc

Cross-over Time

Vcc = 480 V, IC =7 A,

RG =10 Ω ,VGE =15 V

190

ns

tr(Voff)

Off Voltage Rise Time

45

ns

td(off)

Delay Time

107

ns

tf

Fall Time

140

ns

Eoff(**)

Turn-off Switching Loss

240

µJ

Ets

Total Switching Loss

300

µJ

tc

Cross-over Time

Vcc = 480 V, IC =7 A,

RG =10 Ω ,VGE =15 V

Tj = 125 °C

410

ns

tr(Voff)

Off Voltage Rise Time

195

ns

td(off)

Delay Time

204

ns

tf

Fall Time

650

ns

Eoff(**)

Turn-off Switching Loss

565

µJ

Ets

Total Switching Loss

625

µJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

If

Ifm

Forward Current

Forward Current pulsed

7

56

A

Vf

Forward On-Voltage

If = 3.5 A

If = 3.5 A, Tj = 125 °C

1.4

1.1

1.9

V

trr

Qrr

Irrm

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

If = 7A,VR =40V,

Tj =125°C, di/dt = 100 A/

µs

50

70

2.7

ns

nC

A

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Fabricant	No de pièce	Fiches technique	Description
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	STGF19NC60WD	315Kb / 14P	N-channel 600V - 7A - TO-220 Ultra fast PowerMESH IGBT
	STGP7NB60M	529Kb / 11P	N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH™ IGBT June 2003
	STGP7NB60KD	330Kb / 12P	N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT
	STGP7NB60F	330Kb / 8P	N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT
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STGB7NB60FD Fiches technique(PDF) 3 Page - STMicroelectronics

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