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FQA11N90C Datasheet(Fiches technique) 2 Page - Fairchild Semiconductor

Numéro de pièce FQA11N90C
Description  900V N-Channel MOSFET
Télécharger  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA11N90C Datasheet(HTML) 2 Page - Fairchild Semiconductor

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Rev. A, December 2002
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics
TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 15mH, IAS = 11.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 11.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300
µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
900
--
--
V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
1.02
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
--
--
10
µA
VDS = 720 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.5 A
--
0.91
1.1
gFS
Forward Transconductance
VDS = 50 V, ID = 5.5 A
--
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
2530
3290
pF
Coss
Output Capacitance
--
215
280
pF
Crss
Reverse Transfer Capacitance
--
23
30
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 450 V, ID = 11.0 A,
RG = 25 Ω
--
60
130
ns
tr
Turn-On Rise Time
--
130
270
ns
td(off)
Turn-Off Delay Time
--
130
270
ns
tf
Turn-Off Fall Time
--
85
180
ns
Qg
Total Gate Charge
VDS = 720 V, ID = 11.0 A,
VGS = 10 V
--
60
80
nC
Qgs
Gate-Source Charge
--
13
--
nC
Qgd
Gate-Drain Charge
--
25
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
11.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
44.0
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 11.0 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 11.0 A,
dIF / dt = 100 A/µs
--
1000
--
ns
Qrr
Reverse Recovery Charge
--
17.0
--
µC


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