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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SI8415DB-T1-E1 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI8415DB-T1-E1 Fiches technique(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page  Si8415DB Vishay Siliconix New Product www.vishay.com 2 Document Number: 73210 S-50037—Rev. A, 17-Jan-05 b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −0.4 −1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −12 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −12 V, VGS = 0 V, TJ = 70_C −5 mA On-State Drain Currenta ID(on) VDS v −5 V, VGS = −4.5 V −5 A VGS = −4.5 V, ID = −1 A 0.031 0.037 Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −1 A 0.038 0.046 W Drain Source On State Resistance rDS(on) VGS = −1.8 V, ID = −1 A 0.050 0.060 W Forward Transconductancea gfs VDS = −10 V, ID = −1 A 11 S Diode Forward Voltagea VSD IS = −1 A, VGS = 0 V −0.8 −1.1 V Dynamicb Total Gate Charge Qg 19 30 Gate-Source Charge Qgs VDS = −6 V, VGS = −4.5 V, ID = −1 A 1.9 nC Gate-Drain Charge Qgd DS , GS , D 4.8 Gate Resistance Rg f = 1 MHz 19 W Turn-On Delay Time td(on) 15 25 Rise Time tr VDD = −6 V, RL = 6 W 32 50 Turn-Off Delay Time td(off) VDD = −6 V, RL = 6 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W 180 270 ns Fall Time tf g 115 175 ns Source-Drain Reverse Recovery Time trr IF = −1 A, di/dt = 100 A/ms 80 120 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 5 thru 2.5 V 25_C TC = 125_C −55_C 2 V Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 1 V 1.5 V |
Numéro de pièce similaire - SI8415DB-T1-E1 |
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Description similaire - SI8415DB-T1-E1 |
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