FMM200-0075P datasheet(1/2 Pages) IXYS

No de pièce	FMM200-0075P

Description	Trench Power MOSFET

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Fabricant	IXYS [IXYS Corporation]

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Advanced Technical Information

IXYS reserves the right to change limits, test conditions and dimensions.

FMM 200-0075P

I

D25

= 200 A

V

DSS

= 75 V

R

DSon = 3.5

m

Ω

Trench Power MOSFET

-Phaseleg Topology-

in ISOPLUS i4-PACTM

with DAB Base

Features

•

trench MOSFET

- very low on state resistance R

DSon

-

fast body diode

• DAB based ISOPLUS i4-PACTM package

- isolated back surface

- low coupling capacity between pins

and heatsink

- enlarged creepage towards heatsink

- application friendly pinout

- low inductive current path

- extremely high reliability

- light weight

- industry standard outline

- UL registered E 72873

Applications

• automobiles and industrial vehicles

- AC drives - starter generator for 42V etc.

- choppers - replacing series resistors

for DC drives, heating etc.

- DC-DC converters - between 12V

and 42V system etc.

- electronic switches -replacing relays

and fuses

• power supplies

- DC-DC converters

- solar inverters

- converters for fuel cells

• battery supplied systems

- choppers or inverters for drives in

hand held tools

- battery chargers

MOSFET T1/T2

Symbol

Conditions

Maximum Ratings

V

DSS

T

VJ = 25°C to TVJmax

75

V

GS

±20

V

I

D25

T

C = 25°C

200

A

I

D90

T

C = 90°C

160

A

I

F25

(diode) T

C = 25°C

185

A

I

F90

(diode) T

C = 90°C

125

A

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

R

DSon

V

GS = 10 V; ID = 100 A

3.5

4.5 m

Ω

V

GSth

V

DS = 20 V; ID = 1 mA;

2

4

V

I

DSS

V

DS = 75 V; VGS = 0 V; TVJ =

25°C

1

µA

T

VJ = 125°C

0.1

mA

I

GSS

V

GS = ±20 V; VDS = 0 V

200

nA

Q

g

220

nC

Q

gs

50

nC

Q

gd

75

nC

t

d(on)

670

ns

t

r

1020

ns

t

d(off)

1620

ns

t

f

1170

ns

V

F

(diode) I

F = 150 A; VGS = 0 V

1.1

1.6

V

t

rr

(diode) I

F = 20 A; -di/dt = 100 A/µs; VDS = 30 V

120

ns

R

thJC

0.55 K/W

R

thJS

tbd

K/W

V

GS= 10 V; VDS = 60 V; ID = 25 A

V

GS= 10 V; VDS = 30 V;

I

D = 25 A; RG = 10 Ω

IXYS Semiconductor GmbH

Edisonstr. 15,

D-68623 Lampertheim

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: (408) 982-0700, Fax: 408-496-0670

T1

T2

1

5

3

4

2

1

5

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