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2SK3556 Fiches technique(PDF) 1 Page - Fuji Electric

No de pièce 2SK3556
Description  N-CHANNEL SILICON POWER MOSFET
Download  4 Pages
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Fabricant  FUJI [Fuji Electric]
Site Internet  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK3556 Fiches technique(HTML) 1 Page - Fuji Electric

  2SK3556 Datasheet HTML 1Page - Fuji Electric 2SK3556 Datasheet HTML 2Page - Fuji Electric 2SK3556 Datasheet HTML 3Page - Fuji Electric 2SK3556 Datasheet HTML 4Page - Fuji Electric  
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1
P4
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
250
VDSX *5
220
Continuous drain current
ID
±25
Pulsed drain current
ID(puls]
±100
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR *2
25
Maximum Avalanche Energy
EAS*1
372
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD
Ta=25°C
2.02
Tc=25°C
135
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3556-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=12.5A
ID=12.5A
VDS=25V
VCC=72V ID=12.5A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
V
µA
nA
m
S
pF
nC
A
V
µs
µC
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.926
62.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250µA
VGS=0V
ID= 250µA
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=72V
ID=12A
VGS=10V
L=100µH Tch=25°C
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
250
3.0
5.0
25
250
10
100
75
100
816
2000
3000
220
330
15
30
20
30
30
45
60
90
20
30
44
66
14
21
16
24
25
1.10
1.65
0.45
1.5
-55 to +150
Outline Drawings
*1 L=0.67mH, Vcc=48V
*2 Tch=150°C
<
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
<
<<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
=
<
VGS=10V
*4 VDS 250V
*5 VGS=-30V
*6 t=60sec f=60Hz


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