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TC7MA245FK Datasheet(Fiches technique) 6 Page - Toshiba Semiconductor

Numéro de pièce TC7MA245FK
Description  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Télécharger  10 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7MA245FK Datasheet(HTML) 6 Page - Toshiba Semiconductor

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TC7MA245FK
2001-10-23
6
Dynamic Switching Characteristics (Ta
==== 25°C, Input: tr ==== tf ==== 2.0 ns, CL ==== 30 pF)
Characteristics
Symbol
Test Condition
VCC (V)
Typ.
Unit
VIH = 1.8 V, VIL = 0 V
(Note12)
1.8
0.25
VIH = 2.5 V, VIL = 0 V
(Note12)
2.5
0.6
Quiet output maximum dynamic VOL
VOLP
VIH = 3.3 V, VIL = 0 V
(Note12)
3.3
0.8
V
VIH = 1.8 V, VIL = 0 V
(Note12)
1.8
−0.25
VIH = 2.5 V, VIL = 0 V
(Note12)
2.5
−0.6
Quiet output minimum dynamic VOL
VOLV
VIH = 3.3 V, VIL = 0 V
(Note12)
3.3
−0.8
V
VIH = 1.8 V, VIL = 0 V
(Note12)
1.8
1.5
VIH = 2.5 V, VIL = 0 V
(Note12)
2.5
1.9
Quiet output minimum dynamic VOH
VOHV
VIH = 3.3 V, VIL = 0 V
(Note12)
3.3
2.2
V
Note12: This parameter is guaranteed by design.
Capacitive Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
VCC (V)
Typ.
Unit
Input capacitance
CIN
1.8, 2.5, 3.3
6
pF
Bus I/O capacitance
CI/O
1.8, 2.5, 3.3
7
pF
Power dissipation capacitance
CPD
fIN = 10 MHz
(Note13)
1.8, 2.5, 3.3
20
pF
Note13: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD・VCC・fIN + ICC/8 (per bit)


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