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STW12NK90Z Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STW12NK90Z
Description  N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW12NK90Z Fiches technique(HTML) 3 Page - STMicroelectronics

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STW12NK90Z
Electrical ratings
3/14
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
900
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
11
A
ID
Drain current (continuous) at TC = 100°C
7
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
44
A
Ptot
Total dissipation at TC = 25°C
230
W
Derating Factor
1.85
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
6000
V
EAS
(2)
2.
ISD ≤11A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Single pulse avalanche energy
4.5
mJ
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
0.54
°C/W
Rthj-amb
Thermal resistance junction-ambient max
50
°C/W
TJ
Maximum lead temperature for soldering purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
11
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
500
mJ
Table 4.
Gate-source zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-source breakdown
voltage
Igs=± 1mA (open drain)
30
V


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