Moteur de recherche de fiches techniques de composants électroniques |
|
SI7900EDN Fiches technique(PDF) 4 Page - Vishay Siliconix |
|
SI7900EDN Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si7900EDN Vishay Siliconix New Product www.vishay.com 4 Document Number: 71425 S-03369—Rev. A, 02-Apr-01 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) –0.6 –0.4 –0.2 –0.0 0.2 0.4 –50 –25 0 25 50 75 100 125 150 ID = 250 mA 1.0 1.2 0.00 0.02 0.04 0.06 0.08 0 123 456 1 10 20 ID = 9 A 0 0.4 0.6 0.8 TJ = 25_C TJ = 150_C Threshold Voltage TJ – Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) 0 20 80 Single Pulse Power, Junction-to-Ambient Time (sec) 40 60 10–3 10–2 1 10 600 10–1 10–4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 0.1 10 1 0.01 0.001 |
Numéro de pièce similaire - SI7900EDN |
|
Description similaire - SI7900EDN |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |