SI7900EDN datasheet(4/5 Pages) VISHAY

No de pièce	SI7900EDN

Description	Dual N-Channel 20-V (D-S) MOSFET, Common Drain

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Si7900EDN

Vishay Siliconix

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Document Number: 71425

S-03369—Rev. A, 02-Apr-01

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

–0.6

–0.4

–0.2

–0.0

0.2

0.4

–50

–25

0

25

50

75

100

125

150

ID = 250 mA

1.0

1.2

0.00

0.02

0.04

0.06

0.08

0

123

456

1

10

20

ID = 9 A

0

0.4

0.6

0.8

TJ = 25_C

TJ = 150_C

Threshold Voltage

TJ – Temperature (_C)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD – Source-to-Drain Voltage (V)

VGS – Gate-to-Source Voltage (V)

0

20

80

Single Pulse Power, Junction-to-Ambient

Time (sec)

40

60

10–3

10–2

1

10

600

10–1

10–4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 65_C/W

3. TJM – TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

0.1

10

1

0.01

0.001

Numéro de pièce similaire - SI7900EDN

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Description similaire - SI7900EDN

Fabricant	No de pièce	Fiches technique	Description
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